npn epitaxial ty transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 10 v i c collector current 100 ma p c collector power dissipation 200 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =10 a, i e =0 50 v bv ceo collector-emitter breakdown voltage i c =100 a, i b =0 50 v i cbo collector cut-off current v cb =40v, i e =0 0.1 a h fe dc current gain v ce =5v, i c =5ma 30 v ce (sat) collector-emitter saturation voltage i c =10ma, i b =0.5ma 0.3 v c ob output capacitance v cb =10v, i e =0 f=1.0mhz 3.7 pf f t current gain-bandwidth product v ce =10v, i c =5ma 250 mhz v i (off) input off voltage v ce =5v, i c =100 a0.3 v v i (on) input on voltage v ce =0.3v, i c =20ma 2.5 v r 1 input resistor 3.2 4.7 6.2 k ? r 1 /r 2 resistor ratio 0.42 0.47 0.52 KSR1105 switching application (bias resistor built in) ? switching circuit, inverter, interface circuit, driver circuit ? built in bias resistor (r 1 =4.7k ? , r 2 =10k ? ) ? complement to ksr2105 equivalent circuit b e c r1 r2 r05 marking 1. base 2. emitter 3. collector sot-23 1 2 3 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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